NP90N03VLG

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on)1 = 3.2 mΩ MAX. (VGS = 10 V, ID = 45 A) ⎯ RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)

* Low input capacitance ⎯ Ciss = 5000 pF TYP. (VDS = 25 V, VGS = 0 V)

* Designed for automotive application and AEC-Q101 qualified Ordering Informatio

NP90N03VLG

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Mos field effect transistor.

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NP90N03VLG MOS FIELD EFFECT TRANSISTOR Renesas

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