NP90N04MUG

N-CHANNEL POWER MOS FET

Renesas

NP90N04MUG Features

* Super low on-state resistance RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 45 A)

* Channel temperature 175 degree rated (TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS Gate to Source Voltage (VDS = 0 V) VGSS Drain Current (DC) (TC = 25°C) Dr

NP90N04MUG General Description

The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP90N04MUG-S18-AY Note Pure Sn (Tin) Tube 50 p/tube Note Pb-free (This product does not contain Pb in the external electrode). PACK.

NP90N04MUG Datasheet (261.74 KB)