PS2561-1 Datasheet (Renesas) - GaAs light emitting diode and an NPN silicon phototransistor

PS2561-1, GaAs light emitting diode and an NPN silicon phototransistor

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount.

The PS2561L1-1 is wide lead bending type.

The PS2561L

PS2561-1 Features

* High isolation voltage (BV = 5 000 Vr.m.s.)

* High collector to emitter voltage (VCEO = 80 V)

* High current transfer ratio (CTR = 200% TYP.)

* High-speed switching (tr = 3 s TYP., tf = 5 s TYP.)

* Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-