PS2561-1 GaAs light emitting diode and an NPN silicon phototransistor

Renesas

Description

PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTI.
The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.

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Datasheet Specifications

Part number: PS2561-1
Manufacturer: Renesas ↗
File Size: 5.11 MB
Datasheet: PS2561-1-Renesas.pdf
Description: GaAs light emitting diode and an NPN silicon phototransistor

Features

* High isolation voltage (BV = 5 000 Vr. m. s. )
* High collector to emitter voltage (VCEO = 80 V)
* High current transfer ratio (CTR = 200% TYP. )
* High-speed switching (tr = 3 s TYP. , tf = 5 s TYP. )
* Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-

Applications

* Power supply
* Telephone/FAX.
* FA/OA equipment
* Programmable logic controllers R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 Page 1 of 16 PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1e PACKAGE DIMENSIONS (UNIT: mm) DIP Type PS2561-1 4.6±0.35 43 Wide Lead Bending Type 4.6±0.35 43 PS2

PS2561-1 Distributors

📁 Related Datasheet

PS2561-2 PS2561-4 PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1

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PS2561-1 GaAs light emitting diode and NPN silicon phototransistor Renesas

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