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PS2561L-1 Datasheet - Renesas

GaAs light emitting diode and an NPN silicon phototransistor

PS2561L-1 Features

* High isolation voltage (BV = 5 000 Vr.m.s.)

* High collector to emitter voltage (VCEO = 80 V)

* High current transfer ratio (CTR = 200% TYP.)

* High-speed switching (tr = 3 s TYP., tf = 5 s TYP.)

* Ordering number of taping product: PS2561L-1-F3 : 2 000 pcs/reel : PS2561L2-1-

PS2561L-1 General Description

The PS2561-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor. The PS2561-1 is in a plastic DIP (Dual In-line Package) and the PS2561L-1 is lead bending type (Gull-wing) for surface mount. The PS2561L1-1 is wide lead bending type. The PS2561L.

PS2561L-1 Datasheet (5.11 MB)

Preview of PS2561L-1 PDF

Datasheet Details

Part number:

PS2561L-1

Manufacturer:

Renesas ↗

File Size:

5.11 MB

Description:

Gaas light emitting diode and an npn silicon phototransistor.
PS2561-1, PS2561L-1, PS2561L1-1, PS2561L2-1 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE Data Sheet R08DS0207EJ0100 Rev.1.00 Dec 25, 2020 DESCRIPTI.

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PS2561L1-1 GaAs light emitting diode and an NPN silicon phototransistor (Renesas)

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PS2561L-1 GaAs light emitting diode and NPN silicon phototransistor Renesas

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