| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
 |
Renesas Electronics Corporation | R1EV58256BDANBI-B2 | IC EEPROM 256KBIT PARALLEL 28DIP | DigiKey | 0 | 0 |
$0
|
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R1EV58256BDAN Datasheet (589.57 KB)
R1EV58256BDAN
589.57 KB
256k eeprom.
R1EV58256BxxN Series R1EV58256BxxR Series
256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR)
Data Sheet
R10DS0208EJ0201 Rev.2.
* Single supply: 2.7 to 5.5 V
* Access time: 85 ns (max)/100 ns (max) at 4.5 V VCC < 5.5 V 120 ns (max) at 2.7 V VCC 5.5 V
* Power dissipation: Active: 20 mW/MHz (typ) Standby: 110 W (max)
* On-chip latches: address, data, CE, OE, WE
* Automatic byte write: 10 ms (
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