R1EV58256BDAN Datasheet - Renesas

R1EV58256BDAN 256K EEPROM

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuit.

R1EV58256BDAN Features

* Single supply: 2.7 to 5.5 V

* Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V

* Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max)

* On-chip latches: address, data, CE, OE, WE

* Automatic byte write: 10 ms (

R1EV58256BDAN Datasheet (589.57 KB)