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R1EV58256BTCN, R1EV58256BDAN 256K EEPROM

R1EV58256BTCN Description

R1EV58256BxxN Series R1EV58256BxxR Series 256K EEPROM (32-Kword × 8-bit) Ready/Busy and RES function (R1EV58256BxxR) Data Sheet R10DS0208EJ0201 Rev.2.
Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

R1EV58256BTCN Features

* Single supply: 2.7 to 5.5 V
* Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V
* Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max)
* On-chip latches: address, data, CE, OE, WE
* Automatic byte write: 10 ms (

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: R1EV58256BTCN, R1EV58256BDAN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
R1EV58256BTCN, R1EV58256BDAN
Manufacturer
Renesas ↗
File Size
589.57 KB
Datasheet
R1EV58256BDAN-Renesas.pdf
Description
256K EEPROM
Note
This datasheet PDF includes multiple part numbers: R1EV58256BTCN, R1EV58256BDAN.
Please refer to the document for exact specifications by model.

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256K EEPROM Renesas
Renesas R1EV58256BTCN-like datasheet