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R1EV58256BTCN, R1EV58256BDAN Datasheet - Renesas

R1EV58256BDAN-Renesas.pdf

This datasheet PDF includes multiple part numbers: R1EV58256BTCN, R1EV58256BDAN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

R1EV58256BTCN, R1EV58256BDAN

Manufacturer:

Renesas ↗

File Size:

589.57 KB

Description:

256k eeprom.

Note:

This datasheet PDF includes multiple part numbers: R1EV58256BTCN, R1EV58256BDAN.
Please refer to the document for exact specifications by model.

R1EV58256BTCN, R1EV58256BDAN, 256K EEPROM

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

They have realized high speed, low power consumption and high reliability by employing advanced MONOS memory technology and CMOS process and circuit

R1EV58256BTCN Features

* Single supply: 2.7 to 5.5 V

* Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V

* Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max)

* On-chip latches: address, data, CE, OE, WE

* Automatic byte write: 10 ms (

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