R1EV58256BTDR, R1EV58256BDAN - 256K EEPROM

Name: R1EV58256BTDR
SKU: R1EV58256BTDR-1437289

Renesas

📥 Download Datasheet

R1EV58256BTDR Datasheet Preview — This datasheet PDF includes multiple part numbers: R1EV58256BTDR, R1EV58256BDAN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	R1EV58256BTDR, R1EV58256BDAN
Manufacturer	Renesas
File Size	589.57 KB
Description	256K EEPROM
Datasheet	R1EV58256BDAN-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: R1EV58256BTDR, R1EV58256BDAN. Please refer to the document for exact specifications by model.

R1EV58256BTDR Product details

Description

Renesas Electronics’ R1EV58256BxxN series and R1EV58256BxxR series are electrically erasable and programmable EEPROM’s organized as 32768-word  8-bit.

Features

Single supply: 2.7 to 5.5 V.
Access time:  85 ns (max)/100 ns (max) at 4.5 V  VCC < 5.5 V  120 ns (max) at 2.7 V  VCC  5.5 V.
Power dissipation:  Active: 20 mW/MHz (typ)  Standby: 110 W (max).
On-chip latches: address, data, CE, OE, WE.
Automatic byte write: 10 ms (max).
Automatic page write (64 bytes): 10 ms (max).
Ready/Busy (only the R1EV58256BxxR series).
Data polling and Toggle bit.
Data protection circuit on power on/off.
Conforms.

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Published: May 31, 2020 |