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RBN50H65T1FPQ-A0

IGBT

RBN50H65T1FPQ-A0 Features

* Trench gate and thin wafer technology (G8H series)

* High speed switching

* Built in fast recovery diode in one package

* Non-specification for short circuit

* Low collector to emitter saturation voltage

* Applications: UPS, Welding, photovoltaic VCE(sat) = 1.5 V typ.

RBN50H65T1FPQ-A0 Datasheet (167.67 KB)

Preview of RBN50H65T1FPQ-A0 PDF

Datasheet Details

Part number:

RBN50H65T1FPQ-A0

Manufacturer:

Renesas ↗

File Size:

167.67 KB

Description:

Igbt.

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