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RJH1CF7RDPQ-80 High Speed Power Switching

RJH1CF7RDPQ-80 Description

Preliminary Datasheet RJH1CF7RDPQ-80 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJH1CF7RDPQ-80 Features

* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C)
* Gate to emitter voltage rating ±30 V
* Pb-free lead

RJH1CF7RDPQ-80 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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High Speed Power Switching Renesas
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