RJH1CF7RDPQ-80 - High Speed Power Switching
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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJH1CF7RDPQ-80 Features
* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C)
* Gate to emitter voltage rating ±30 V
* Pb-free lead
