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RJH1CF7RDPQ-80 Datasheet - Renesas

RJH1CF7RDPQ-80 - High Speed Power Switching

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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Renesa

RJH1CF7RDPQ-80 Features

* Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency device for induction heating Low collector to emitter saturation voltage VCE(sat) = 1.85 V typ. (at IC = 35 A, VGE = 15V, Ta = 25°C)

* Gate to emitter voltage rating ±30 V

* Pb-free lead

RJH1CF7RDPQ-80_Renesas.pdf

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Datasheet Details

Part number:

RJH1CF7RDPQ-80

Manufacturer:

Renesas ↗

File Size:

160.23 KB

Description:

High speed power switching.

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