Part number:
RJH1CD6DPQ-A0
Manufacturer:
File Size:
110.42 KB
Description:
Igbt.
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (trr = 100 ns typ.) in one package
* Trench gate and thin wafer technology
* High speed switching tf
RJH1CD6DPQ-A0 Datasheet (110.42 KB)
RJH1CD6DPQ-A0
110.42 KB
Igbt.
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