RJH1CD6DPQ-E0 Datasheet, Igbt, Renesas

RJH1CD6DPQ-E0 Features

• Igbt
• Short circuit withstand time (5 s typ.)
• Low collector to emitter saturation voltage VCE(sat) = 2.0 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
• Built-in f

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Part number:

RJH1CD6DPQ-E0

Manufacturer:

Renesas ↗

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110.53kb

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

RJH1CD6DPQ-E0 Application

• Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

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RJH1CD6DPQ-E0

Renesas

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