RJH1CD5DPQ-A0 - High Speed Power Switching

Renesas

RJH1CD5DPQ-A0 Datasheet Preview — Preview of RJH1CD5DPQ-A0 PDF

Datasheet Details

Part number	RJH1CD5DPQ-A0
Manufacturer	Renesas ↗
File Size	110.41 KB
Description	High Speed Power Switching
Datasheet	RJH1CD5DPQ-A0_Renesas.pdf

RJH1CD5DPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (trr = 100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 15 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0451EJ0100 Rev.1.00 Jul 22, 2011 Outline.

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Published: Jul 20, 2012 |