RJH1CD7DPQ-A0 Datasheet, Igbt, Renesas

RJH1CD7DPQ-A0 Features

  • Igbt
  • Short circuit withstand time (5 s typ.)
  • Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
  • Built in f

PDF File Details

Part number:

RJH1CD7DPQ-A0

Manufacturer:

Renesas ↗

File Size:

110.43kb

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📄 Datasheet

Description:

Igbt. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJH1CD7DPQ-A0 Application

  • Applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and t

TAGS

RJH1CD7DPQ-A0
IGBT
Renesas

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