RJH1CD7DPQ-A0 - IGBT
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You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.
Renesa
RJH1CD7DPQ-A0 Features
* Short circuit withstand time (5 s typ.)
* Low collector to emitter saturation voltage VCE(sat) = 2.2 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (trr = 100 ns typ.) in one package
* Trench gate and thin wafer technology
* High speed switching tf
