Datasheet4U Logo Datasheet4U.com

RJH60D0DPM Datasheet - Renesas

RJH60D0DPM IGBT

RJH60D0DPM Features

* Short circuit withstand time (5 s typ.)

* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode (100 ns typ.) in one package

* Trench gate and thin wafer technology

* High speed switching tf = 70

RJH60D0DPM_Renesas.pdf

Preview of RJH60D0DPM PDF
RJH60D0DPM Datasheet Preview Page 2 RJH60D0DPM Datasheet Preview Page 3

Datasheet Details

Part number:

RJH60D0DPM

Manufacturer:

Renesas ↗

File Size:

164.16 KB

Description:

Igbt.

📁 Related Datasheet

RJH60D0DPK Silicon N Channel IGBT (Renesas Technology)

RJH60D0DPQ-A0 IGBT (Renesas)

RJH60D1DPE Silicon N Channel IGBT (Renesas Technology)

RJH60D1DPP-A0 IGBT (Renesas)

RJH60D1DPP-M0 Silicon N-Channel IGBT (Renesas Technology)

RJH60D2DPE Silicon N Channel IGBT (Renesas Technology)

RJH60D2DPP-M0 Silicon N Channel IGBT (Renesas Technology)

RJH60D3DPE Silicon N Channel IGBT (Renesas Technology)

TAGS

RJH60D0DPM RJH60D0DPM IGBT Renesas

RJH60D0DPM Distributor