RJH60D0DPM
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RJH60D0DPK - Silicon N Channel IGBT
(Renesas Technology)
RJH60D0DPK
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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Prel.
RJH60D0DPQ-A0 - IGBT
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Preliminary Datasheet
RJH60D0DPQ-A0
600 V - 22 A - IGBT Application: Inverter
Features
Short circuit withstand time (5 s typ.) Low collector to .
RJH60D1DPE - Silicon N Channel IGBT
(Renesas Technology)
RJH60D1DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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RJH60D1DPP-A0 - IGBT
(Renesas)
RJH60D1DPP-A0
600V - 10A - IGBT Power Switching
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Trench gate and thin wafer technology Built in fast recovery diode (100 ns typ.) in one p.
RJH60D1DPP-M0 - Silicon N-Channel IGBT
(Renesas Technology)
RJH60D1DPP-M0
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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RJH60D2DPE - Silicon N Channel IGBT
(Renesas Technology)
RJH60D2DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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Prel.
RJH60D2DPP-M0 - Silicon N Channel IGBT
(Renesas Technology)
RJH60D2DPP-M0
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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P.
RJH60D3DPE - Silicon N Channel IGBT
(Renesas Technology)
RJH60D3DPE
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
..
Prel.
RJH60D3DPP-M0 - IGBT
(Renesas)
Preliminary Datasheet
RJH60D3DPP-M0
600V - 17A - IGBT Application: Inverter
R07DS0162EJ0400 Rev.4.00
Apr 19, 2012
Features
Short circuit withstan.
RJH60D5DPK - Silicon N Channel IGBT
(Renesas Technology)
RJH60D5DPK
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
..
Prel.