RJH60D1DPP-A0

IGBT

Renesas

* Trench gate and thin wafer technology

* Built in fast recovery diode (100 ns typ.) in one package

* Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C)

* High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A,

RJH60D1DPP-A0

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Igbt.

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RJH60D1DPP-A0 IGBT Renesas

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