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RJH60D1DPP-A0 - IGBT

Renesas

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Datasheet Details

Part number	RJH60D1DPP-A0
Manufacturer	Renesas ↗
File Size	182.15 KB
Description	IGBT
Datasheet	RJH60D1DPP-A0-Renesas.pdf

RJH60D1DPP-A0 Product details

Features

Trench gate and thin wafer technology.
Built in fast recovery diode (100 ns typ. ) in one package.
Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Tc = 25°C).
High speed switching tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load).
Short circuit withstand time (5 s typ. ).

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Published: Jan 14, 2024 |