RJH60D0DPQ-A0 - IGBT

Renesas

RJH60D0DPQ-A0 Datasheet Preview — Preview of RJH60D0DPQ-A0 PDF

Datasheet Details

Part number	RJH60D0DPQ-A0
Manufacturer	Renesas ↗
File Size	146.62 KB
Description	IGBT
Datasheet	RJH60D0DPQ-A0_Renesas.pdf

RJH60D0DPQ-A0 Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 70 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 22 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0526EJ0100 Rev.1.00 Aug 26, 2011 Outline.

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Published: Jul 20, 2012 |