RJK1051DPB Datasheet - Renesas

RJK1051DPB N-Channel Power MOSFET

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RJK1051DPB Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting R07DS0082EJ0102 (Previous: REJ03G1768-0101) Rev.1.02 Jul 30, 2010

* Low on-resistance RDS(on) = 30 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free Outline RENESAS Package

RJK1051DPB Datasheet (142.23 KB)