RJK1211DPA

N-Channel Power MOSFET

Renesas

RJK1211DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* R07DS0089EJ0300 Rev.3.00 Apr 11, 2011 Outline RENESAS Package c

RJK1211DPA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK1211DPA Datasheet (168.57 KB)