RJK1211DPA
168.57kb
N-channel power mosfet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor
TAGS
📁 Related Datasheet
RJK1211DNS - N-Channel Power MOSFET
(Renesas)
Preliminary Datasheet
RJK1211DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive .
RJK1212DNS - N-Channel Power MOSFET
(Renesas)
Preliminary Datasheet
RJK1212DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive .
RJK1212DPA - N-Channel Power MOSFET
(Renesas)
Preliminary Datasheet
RJK1212DPA
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive .
RJK1001DPN-E0 - N-Channel MOSFET
(Renesas Technology)
RJK1001DPN-E0
N-Channel MOS FET 100 V, 80 A, 5.5 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 4.4 m typ. (at .
RJK1002DPN-E0 - N-Channel MOS FET
(Renesas Technology)
RJK1002DPN-E0
N-Channel MOS FET 100 V, 70 A, 7.6 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 6.0 m typ. (at .
RJK1003DPN-E0 - N-Channel MOSFET
(Renesas)
RJK1003DPN-E0
N-Channel MOS FET 100 V, 50 A, 11 m
Features
High speed switching Low drive current Low on-resistance RDS(on) = 8.8 m typ. (at V.
RJK1008DPE - N-Channel Power MOSFET
(Renesas)
RJK1008DPE
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1629-0100 Rev.1.00 Apr 03, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.
RJK1008DPN - N-Channel Power MOSFET
(Renesas)
RJK1008DPN
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1627-0100 Rev.1.00 Mar 21, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.
RJK1008DPP - N-Channel Power MOSFET
(Renesas)
RJK1008DPP
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1708-0100 Rev.1.00 Jul 03, 2008
Features
• VDSS : 100 V • RDS(on) : 11 mΩ (Max) • ID.
RJK1021DPE - N-Channel Power MOSFET
(Renesas)
RJK1021DPE
N-Channel Power MOSFET High-Speed Switching Use
REJ03G1630-0100 Rev.1.00 Apr 03, 2008
Features
• VDSS : 100 V • RDS(on) : 20 mΩ (Max) • ID.