Description
RJK1526DPJ, RJK1526DPE, RJK1526DPF Silicon N Channel MOS FET High Speed Power Switching REJ03G1859-0100 Rev.1.00 Nov 06, 2009 .
Features
* Low on-resistance RDS(on) = 0.036 Ω typ. (at ID = 25 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)
4
: PRSS0004AE-B LDPAK(S)-(1)
4
: PRSS0004AE-C LDPAK(S)-(2) )
4
D
G 1 1 2 3 1
Applications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat
