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RJP30E2

N-Channel Power MOSFET

RJP30E2 Features

* Trench gate technology (G5H series)

* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ

* High speed switching tf = 150 ns typ

* Low leak current ICES = 1 μA max

* Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package

RJP30E2 Datasheet (213.25 KB)

Preview of RJP30E2 PDF

Datasheet Details

Part number:

RJP30E2

Manufacturer:

Renesas ↗

File Size:

213.25 KB

Description:

N-channel power mosfet.

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RJP30E2 N-Channel Power MOSFET Renesas

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