RJP30E2
Key Features
- Trench gate technology (G5H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 150 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| RJP3053DPP | Renesas | IGBT |
| RJP3066DPK | Renesas | IGBT |
| RJP3063DPP | Renesas | IGBT |
| RJP3054DPP | Renesas | IGBT |
| RJP3064DPP | Renesas | IGBT |
| RJP3055DPP | Renesas | IGBT |
| RJP3065DPP | Renesas | IGBT |
| RJP3056DPK | Renesas | IGBT |
| RJP3057DPK | Renesas | IGBT |
| RJP3067DPK | Renesas | IGBT |