RJP30E2, RJP30E2DPP-M0 N-Channel Power MOSFET

Renesas

Description

RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching .

📥 Download Datasheet

RJP30E2 Datasheet Preview — This datasheet PDF includes multiple part numbers: RJP30E2, RJP30E2DPP-M0. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: RJP30E2, RJP30E2DPP-M0
Manufacturer: Renesas ↗
File Size: 213.25 KB
Datasheet: RJP30E2DPP-M0_Renesas.pdf
Description: N-Channel Power MOSFET
Note: This datasheet PDF includes multiple part numbers: RJP30E2, RJP30E2DPP-M0.
Please refer to the document for exact specifications by model.

Features

* Trench gate technology (G5H series)
* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
* High speed switching tf = 150 ns typ
* Low leak current ICES = 1 μA max
* Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package

RJP30E2 Distributors

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RJP30E2DPP-M0 N-Channel Power MOSFET Renesas

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