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RJP30E3DPP-M0 Datasheet N-channel Power MOSFET

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power.

Key Features

  • Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Outline.

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