Datasheet4U Logo Datasheet4U.com

RJP30E2 Datasheet N-channel Power MOSFET

Manufacturer: Renesas

Overview: RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Trench gate technology (G5H series).
  • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
  • High speed switching tf = 150 ns typ.
  • Low leak current ICES = 1 μA max.
  • Isolated package TO-220FL Outline.

More Datasheets from Renesas

Part Number Description
RJP30E2DPK-M0 N-Channel Power MOSFET
RJP30E2DPP-M0 N-Channel Power MOSFET
RJP30E3DPK-M0 N-Channel Power MOSFET
RJP30E3DPP-M0 N-Channel Power MOSFET
RJP30H1 N-Channel IGBT
RJP30H1DPD N-Channel IGBT
RJP30H1DPP-M0 N-Channel IGBT
RJP30H2A Silicon N-Channel IGBT
RJP30H2DPK-M0 N-Channel Power MOSFET
RJP30K3DPP-M0 N-Channel Power MOSFET

RJP30E2 Distributor