RJP30E2
RJP30E2 is N-Channel Power MOSFET manufactured by Renesas.
- Part of the RJP30E2DPP-M0 comparator family.
- Part of the RJP30E2DPP-M0 comparator family.
RJP30E2DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
- Trench gate technology (G5H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 150 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL)
Preliminary Datasheet
R07DS0347EJ0200 Rev.2.00
Apr 12, 2011
1 23
1. Gate
2. Collector
3....
