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RJP30E2 - N-Channel Power MOSFET

This page provides the datasheet information for the RJP30E2, a member of the RJP30E2DPP-M0 N-Channel Power MOSFET family.

Product Overview

Renesas

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RJP30E2 N-Channel Power MOSFET by Renesas - Datasheet Preview — Datasheet preview – RJP30E2

Datasheet Details

Part number	RJP30E2
Manufacturer	Renesas
File Size	213.25 KB
Description	N-Channel Power MOSFET
Datasheet	RJP30E2 Datasheet
Additional preview pages of the RJP30E2 datasheet.

RJP30E2 Product details

Features

Trench gate technology (G5H series).
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ.
High speed switching tf = 150 ns typ.
Low leak current ICES = 1 μA max.
Isolated package TO-220FL Outline.

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Published: Dec 19, 2020 |