RJP30E2 Description
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching.
RJP30E2 Key Features
- Trench gate technology (G5H series)
- Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
- High speed switching tf = 150 ns typ
- Low leak current ICES = 1 μA max
- Isolated package TO-220FL