Datasheet4U.com

RJP30E2

Manufacturer: Renesas

RJP30E2 datasheet by Renesas.

This datasheet includes multiple variants, all published together in a single manufacturer document.

RJP30E2 datasheet preview

RJP30E2 Datasheet Details

Part number	RJP30E2
Datasheet	RJP30E2 RJP30E2DPP-M0 Datasheet (PDF)
File Size	213.25 KB
Manufacturer	Renesas
Description	N-Channel Power MOSFET

RJP30E2 Overview

RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching.

RJP30E2 Key Features

Trench gate technology (G5H series)
Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
High speed switching tf = 150 ns typ
Low leak current ICES = 1 μA max
Isolated package TO-220FL

More Datasheets from Renesas

View all Renesas datasheets

Part Number	Description
RJP30E2DPK-M0	N-Channel Power MOSFET
RJP30E2DPP-M0	N-Channel Power MOSFET
RJP30E3DPK-M0	N-Channel Power MOSFET
RJP30E3DPP-M0	N-Channel Power MOSFET
RJP30H1	N-Channel IGBT
RJP30H1DPD	N-Channel IGBT
RJP30H1DPP-M0	N-Channel IGBT
RJP30H2A	Silicon N-Channel IGBT
RJP30H2DPK-M0	N-Channel Power MOSFET
RJP30K3DPP-M0	N-Channel Power MOSFET

RJP30E2 Distributor