RJP30H1
RJP30H1 is N-Channel IGBT manufactured by Renesas.
- Part of the RJP30H1DPD comparator family.
- Part of the RJP30H1DPD comparator family.
RJP30H1DPD
Silicon N Channel IGBT High speed power switching
Features
- Trench gate and thin wafer technology (G6H-II series)
- High speed switching: tr = 80 ns typ., tf = 150 ns typ.
- Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
- Low leak current: ICES = 1 A max.
Outline
RENESAS Package code: PRSS0004ZJ-A
(Package name : TO-252)
12 3
Preliminary Datasheet
R07DS0465EJ0200 Rev.2.00
Jun 15, 2011
1. Gate 2. Collector 3. Emitter 4. Collector...
