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RJP30H1 - N-Channel IGBT

This page provides the datasheet information for the RJP30H1, a member of the RJP30H1DPD N-Channel IGBT family.

Product Overview

Renesas

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RJP30H1 N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP30H1

Datasheet Details

Part number	RJP30H1
Manufacturer	Renesas
File Size	212.44 KB
Description	N-Channel IGBT
Datasheet	RJP30H1 Datasheet
Additional preview pages of the RJP30H1 datasheet.

RJP30H1 Product details

Features

Trench gate and thin wafer technology (G6H-II series).
High speed switching: tr = 80 ns typ. , tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max. Outline.

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Published: Dec 19, 2020 |