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RJP30H1

Manufacturer: Renesas

RJP30H1 datasheet by Renesas.

This datasheet includes multiple variants, all published together in a single manufacturer document.

RJP30H1 datasheet preview

RJP30H1 Datasheet Details

Part number	RJP30H1
Datasheet	RJP30H1 RJP30H1DPD Datasheet (PDF)
File Size	212.44 KB
Manufacturer	Renesas
Description	N-Channel IGBT

RJP30H1 Overview

RJP30H1DPD Silicon N Channel IGBT High speed power switching.

RJP30H1 Key Features

Trench gate and thin wafer technology (G6H-II series)
High speed switching: tr = 80 ns typ., tf = 150 ns typ
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ
Low leak current: ICES = 1 A max

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