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RJP30H1 Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: RJP30H1DPD Silicon N Channel IGBT High speed power switching.

This datasheet includes multiple variants, all published together in a single manufacturer document.

RJP30H1 datasheet preview

Datasheet Details

Part number	RJP30H1
Manufacturer	Renesas
File Size	212.44 KB
Description	N-Channel IGBT
Datasheet	RJP30H1 RJP30H1DPD Datasheet (PDF)

Key Features

Trench gate and thin wafer technology (G6H-II series).
High speed switching: tr = 80 ns typ. , tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max. Outline.

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