RJP30H1 - N-Channel IGBT

Renesas

Download the RJP30H1 datasheet PDF. This datasheet also covers the RJP30H1DPD variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

Trench gate and thin wafer technology (G6H-II series).
High speed switching: tr = 80 ns typ. , tf = 150 ns typ.
Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
Low leak current: ICES = 1 A max. Outline.

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RJP30H1 n-channel igbt by Renesas - Datasheet Preview — Note: The manufacturer provides a single datasheet file (RJP30H1DPD_Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	RJP30H1
Manufacturer	Renesas
File Size	212.44 KB
Description	N-Channel IGBT
Datasheet	RJP30H1 Datasheet

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Other Datasheets by Renesas

Part Number	Description
RJP30H1DPD	N-Channel IGBT
RJP30H1DPP-M0	N-Channel IGBT
RJP30H2A	Silicon N-Channel IGBT
RJP30H2DPK-M0	N-Channel Power MOSFET
RJP30E2	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching: tr = 80 ns typ., tf = 150 ns typ.  Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.  Low leak current: ICES = 1 A max. Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) C 4 12 3 G E Preliminary Datasheet R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C www.DataSheet.co.