RJP30H1 Description
RJP30H1DPD Silicon N Channel IGBT High speed power switching.
RJP30H1 Key Features
- Trench gate and thin wafer technology (G6H-II series)
- High speed switching: tr = 80 ns typ., tf = 150 ns typ
- Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ
- Low leak current: ICES = 1 A max