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RJP30H1DPD Datasheet N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power.

RJP30H1DPD datasheet preview

Datasheet Details

Part number	RJP30H1DPD
Manufacturer	Renesas
File Size	212.44 KB
Description	N-Channel IGBT
Datasheet	RJP30H1DPD_Renesas.pdf

Key Features

Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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