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RJP30H1DPD - N-Channel IGBT

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Renesas

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RJP30H1DPD N-Channel IGBT by Renesas - Datasheet Preview — Datasheet preview – RJP30H1DPD

Datasheet Details

Part number	RJP30H1DPD
Manufacturer	Renesas
File Size	212.44 KB
Description	N-Channel IGBT
Datasheet	RJP30H1DPD Datasheet
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Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ. , tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 15, 2011 Outline.

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Published: May 2, 2012 |