RJP30H2A Description
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15,.
RJP30H2A Key Features
- Trench gate and thin wafer technology (G6H-II series)
- Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
- High speed switching: tf = 100 ns typ, tf = 180 ns typ
- Low leak current: ICES = 1 A max