RJP30H2A
RJP30H2A is Silicon N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
RJP30H2DPK-M0 / RJP30H2A
Silicon N Channel IGBT High speed power switching
R07DS0467EJ0200 Rev.2.00
Jun 15, 2011
Features
- Trench gate and thin wafer technology (G6H-II series)
- Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
- High speed switching: tf = 100 ns typ, tf = 180 ns typ
- Low leak current: ICES = 1 A max
Outline
RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG)
1 23
1. Gate 2. Collector G 3. Emitter 4. Collector...
