RJP30H2A - Silicon N-Channel IGBT

Renesas

Key Features

Trench gate and thin wafer technology (G6H-II series).
Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ.
High speed switching: tf = 100 ns typ, tf = 180 ns typ.
Low leak current: ICES = 1 A max Outline.

RJP30H2A silicon n-channel igbt by Renesas - Datasheet Preview

Datasheet Details

Part number	RJP30H2A
Manufacturer	Renesas
File Size	226.18 KB
Description	Silicon N-Channel IGBT
Datasheet	RJP30H2A Datasheet

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) 4 C 1 23 1. Gate 2. Collector G 3. Emitter 4. Collector (Flange) E Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tc = 25C www.DataSheet.co.