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RJP30E2DPP-M0 - N-Channel Power MOSFET

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Renesas

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RJP30E2DPP-M0 N-Channel Power MOSFET by Renesas - Datasheet Preview — Datasheet preview – RJP30E2DPP-M0

Datasheet Details

Part number	RJP30E2DPP-M0
Manufacturer	Renesas
File Size	213.25 KB
Description	N-Channel Power MOSFET
Datasheet	RJP30E2DPP-M0 Datasheet
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Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Trench gate technology (G5H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 150 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0347EJ0200 Rev.2.00 Apr 12, 2011 Outline.

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Published: May 2, 2012 |