RJQ6008BDPM

600V Power Switching IGBT

Renesas

* Built in fast recovery diode in one package

* Low collector to emitter saturation voltage VCE(sat) =1.8 V typ. (at IC = 20 A, VGE = 15V, Tc = 25 C)

* Quality grade: Standard

* High speed switching

* Applications: PFC Key Performance Type RJQ6008BDPM VCES 600 V IC 20 A VCE

RJQ6008BDPM

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600v power switching igbt.

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RJQ6008BDPM 600V Power Switching IGBT Renesas

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