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RJQ6022DPM N-Channel IGBT

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Description

Preliminary Datasheet RJQ6022DPM 600V - 10A - IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Features

* High speed switching
* Low on-state voltage
* Built in fast recovery diode in one package R07DS0651EJ0100 Rev.1.00 Jan 23, 2012 Outline PRSS0005ZB-A) (Package name: TO-3PFM) IGBT1 Diode1 1 1. Gate (1) 2. Collector (1) 3. Emitter (1), Collector (2) 4. Emitter (2) 5. Gate (2

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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