RJQ6008DPM Datasheet - Renesas

RJQ6008DPM IGBT/Diode

RJQ6008DPM Features

* Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline R

Datasheet Details

RJQ6008DPM

109.31 KB

Igbt/diode.

📁 Related Datasheet

RJQ6008BDPM 600V Power Switching IGBT (Renesas)

RJQ6020DPM N-Channel MOS FET (Renesas)

RJQ6021DPM N-Channel IGBT (Renesas)

RJQ6022DPM N-Channel IGBT (Renesas)

RJ-032 Single 10/100 BASE-TX Filtered Connector Module (Taimag)

RJ-13 Single Turn Trimming Potentiometer (ETC)

RJ0805 Serie RJ (SMC)

RJ0805U Serie RJ (SMC)

TAGS

RJQ6008DPM IGBT Diode Renesas

RJQ6008DPM Distributor