RJQ6008DPM

IGBT/Diode

Renesas

* Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)

* Built in fast recovery diode in one package

* Trench gate and thin wafer technology

* High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline R

RJQ6008DPM

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Igbt/diode.

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