RJQ6008DPM IGBT/Diode

Renesas

Description

RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching .

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Datasheet Specifications

Part number: RJQ6008DPM
Manufacturer: Renesas ↗
File Size: 109.31 KB
Datasheet: RJQ6008DPM-Renesas.pdf
Description: IGBT/Diode

Features

* Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline R

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