RJQ6008DPM Datasheet, igbt/diode equivalent, Renesas

RJQ6008DPM Features

• Igbt/diode
• Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
• Built in fast recovery diode in one package
• Trench ga

PDF File Details

Part number:

RJQ6008DPM

Manufacturer:

Renesas ↗

File Size:

109.31kb

Download:

📄 Datasheet

Description:

Igbt/diode.

TAGS

RJQ6008DPM

Renesas

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