RQK2501YGDQA

Silicon N-Channel MOS FET

Renesas

RQK2501YGDQA Features

* High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive

* Low drive current

* High speed switching

* Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ04

RQK2501YGDQA General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RQK2501YGDQA Datasheet (129.64 KB)