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RQK2501YGDQA Silicon N-Channel MOS FET

RQK2501YGDQA Description

RQK2501YGDQA Silicon N Channel MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RQK2501YGDQA Features

* High drain to source voltage and Low gate drive VDSS : 250 V and 2.5 V gate drive
* Low drive current
* High speed switching
* Small traditional package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Preliminary Datasheet R07DS0312EJ04

RQK2501YGDQA Applications

* for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic a

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Silicon N-Channel MOS FET Renesas
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