UPA2810

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS =

* 10 V, ID =

* 13 A) RDS(on)2 = 23 mΩ MAX. (VGS =

* 4.5 V, ID =

* 6.5 A)

* Built-in gate protection diode

* Thin type surface mount package with heat spreader

* RoHS Compliant ABSOLUTE

UPA2810

297.93 KB

Mos field effect transistor.

📁 Related Datasheet

UPA2811T1L MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2812T1L P-channel MOSFEF (Renesas)

UPA2813T1L P-channel MOSFEF (Renesas)

UPA2814T1S P-channel MOSFEF (Renesas)

UPA2815T1S P-channel MOSFEF (Renesas)

UPA2816T1S P-channel MOSFEF (Renesas)

UPA2806 MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2821T1L MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2826T1S N-channel MOSFET (Renesas)

UPA2001C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

TAGS

UPA2810 MOS FIELD EFFECT TRANSISTOR Renesas

Image Gallery