Datasheet4U Logo Datasheet4U.com

UPA2812T1L P-channel MOSFEF

UPA2812T1L Description

Data Sheet μPA2812T1L P-channel MOSFEF *30 V, *30 A, 4.8 mΩ .
The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

UPA2812T1L Features

* VDSS =
* 30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS =
* 10 V, ID =
* 30 A)
* 4.5 V Gate-drive available
* Small & thin type surface mount package with heat spreader
* Pb-free and Halogen free 8-pin HVSON(333

📥 Download Datasheet

Preview of UPA2812T1L PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2002C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2003C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2004C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
  • UPA2008 - 3W STEREO CLASS-D AUDIO POWER AMPLIFIER (Unisonic Technologies)
  • UPA2450 - N-Channel MOSFET (NEC)
  • UPA2450B - N-Channel MOSFET (NEC)
  • UPA2450C - N-Channel MOSFET (NEC)

📌 All Tags

P-channel MOSFEF Renesas
Renesas UPA2812T1L-like datasheet