Datasheet4U Logo Datasheet4U.com

UPA2812T1L

P-channel MOSFEF

UPA2812T1L Features

* VDSS =

* 30 V (TA = 25°C)

* Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS =

* 10 V, ID =

* 30 A)

* 4.5 V Gate-drive available

* Small & thin type surface mount package with heat spreader

* Pb-free and Halogen free 8-pin HVSON(333

UPA2812T1L Datasheet (188.59 KB)

Preview of UPA2812T1L PDF

Datasheet Details

Part number:

UPA2812T1L

Manufacturer:

Renesas ↗

File Size:

188.59 KB

Description:

P-channel mosfef.

📁 Related Datasheet

UPA2810 MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2811T1L MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2813T1L P-channel MOSFEF (Renesas)

UPA2814T1S P-channel MOSFEF (Renesas)

UPA2815T1S P-channel MOSFEF (Renesas)

UPA2816T1S P-channel MOSFEF (Renesas)

UPA2806 MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2821T1L MOS FIELD EFFECT TRANSISTOR (Renesas)

UPA2826T1S N-channel MOSFET (Renesas)

UPA2001C NPN Silicon Epitaxial Darlington Transistor Array (NEC)

TAGS

UPA2812T1L P-channel MOSFEF Renesas

Image Gallery

UPA2812T1L Datasheet Preview Page 2 UPA2812T1L Datasheet Preview Page 3

UPA2812T1L Distributor