UPA2811T1L Datasheet, Transistor, Renesas

UPA2811T1L Features

• Transistor
• VDSS
• 30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =
• 10 V, ID =
• 19 A)
• 4.5 V Gate-drive available

PDF File Details

Part number:

UPA2811T1L

Manufacturer:

Renesas ↗

File Size:

242.49kb

Download:

📄 Datasheet

Description:

Mos field effect transistor. R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and pow

UPA2811T1L Application

• Applications of portable equipment. Features
• VDSS
• 30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS

TAGS

UPA2811T1L

Renesas

📁 Related Datasheet

UPA2810 - MOS FIELD EFFECT TRANSISTOR (Renesas)
DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2810 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The μ PA2810 is P-channel MOSFET designed for DC/DC conv.

UPA2812T1L - P-channel MOSFEF (Renesas)
Data Sheet μPA2812T1L P-channel MOSFEF –30 V, –30 A, 4.8 mΩ Description The μPA2812T1L is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2813T1L - P-channel MOSFEF (Renesas)
Data Sheet μPA2813T1L P-channel MOSFET –30 V, –27 A, 6.2 mΩ Description The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2814T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2814T1S P-channel MOSFET –30 V, –24 A, 7.8 mΩ Description The μPA2814T1S is P-channel MOS Field Effect Transistor designed for DC/DC co.

UPA2815T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2815T1S P-channel MOSFET –30 V, –21 A, 11 mΩ Description The μPA2815T1S is P-channel MOS Field Effect Transistor designed for DC/DC con.

UPA2816T1S - P-channel MOSFEF (Renesas)
Data Sheet μPA2816T1S P-channel MOSFET –30 V, –17 A, 15.5 mΩ Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC c.

UPA2806 - MOS FIELD EFFECT TRANSISTOR (Renesas)
Preliminary Data Sheet μ PA2806 MOS FIELD EFFECT TRANSISTOR Description R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET des.

UPA2821T1L - MOS FIELD EFFECT TRANSISTOR (Renesas)
μPA2821T1L MOS FIELD EFFECT TRANSISTOR PreliminaryData Sheet R07DS0753EJ0100 Rev.1.00 May 25, 2012 Description The μPA2821T1L is N-channel MOS Field.

UPA2826T1S - N-channel MOSFET (Renesas)
Data Sheet μPA2826T1S N-channel MOSFET 20 V , 27 A , 4.3 mΩ Description The μ PA2826T1S is N-channel MOS Field Effect Transistor designed for power m.

UPA2001C - NPN Silicon Epitaxial Darlington Transistor Array (NEC)
.