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UPA2811T1L MOS FIELD EFFECT TRANSISTOR

UPA2811T1L Description

Preliminary Data Sheet μ PA2811T1L MOS FIELD EFFECT TRANSISTOR .
R07DS0191EJ0100 Rev.

UPA2811T1L Features

* VDSS
* 30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =
* 10 V, ID =
* 19 A)
* 4.5 V Gate-drive available
* Built-in gate protection diode
* Small & thin type surface mount package with heat spreader (8-pin HVSON)

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