UPA2811T1L

MOS FIELD EFFECT TRANSISTOR

Renesas

* VDSS

* 30 V (TA = 25°C)

* Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =

* 10 V, ID =

* 19 A)

* 4.5 V Gate-drive available

* Built-in gate protection diode

* Small & thin type surface mount package with heat spreader (8-pin HVSON)

UPA2811T1L

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Mos field effect transistor.

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UPA2811T1L MOS FIELD EFFECT TRANSISTOR Renesas

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