UPA2811T1L - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Datasheet Details

Part number	UPA2811T1L
Manufacturer	Renesas
File Size	242.49 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2811T1L Datasheet
Additional preview pages of the UPA2811T1L datasheet.

Product details

Description

R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Features

VDSS.
30 V (TA = 25°C).
Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX. (VGS =.
10 V, ID =.
19 A).
4.5 V Gate-drive available.
Built-in gate protection diode.
Small & thin type surface mount package with heat spreader (8-pin HVSON).
Halogen free and RoHS compliant Ordering Information Part No. μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD.

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Published: Sep 17, 2013 |