2SC3969 - Silicon NPN Transistor

Datasheet Details

1) Low VCE(sat). VCE(sat) = 0.15V (Typ. ) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SC3969 / 2SC5161 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 237 Transistors FElectrical characteristic curve.

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Published: Mar 22, 2005 |