Part number:
2SC3969
Manufacturer:
File Size:
120.69 KB
Description:
Silicon npn transistor.
* 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transistors FAbsolute maximum ratin
2SC3969
120.69 KB
Silicon npn transistor.
📁 Related Datasheet
2SC3962 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3962
DESCRIPTION ·With TO-220C package ·High vol.
2SC3962 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3962
DESCRIPTION ·Low Collector Saturation Voltage ·Collector-Emitter Breakdown Voltage-
.
2SC3963 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3963
2SC3963
High-Voltage General Amplifier Applications Color TV Class B Sound.
2SC3964 - Silicon NPN Transistor
(Toshiba Semiconductor)
2SC3964
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3964
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio A.
2SC3968 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SC3968
DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (.
2SC3969 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3969
DESCRIPTION ·With TO-220Fa package ·Low col.
2SC3969 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3969
DESCRIPTION ·Low Collector Saturation Voltage ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V (M.
2SC3900 - Epitaxial Planar Silicon Transistor
(Sanyo)
This Material Copyrighted By Its Respective Manufacturer
Free Datasheet http://../
This Material Copyrighted By Its Respective Manu.