DTDG14GPT100 Description
DTDG14GP 1A/60V Digital Transistor (with built-in resistor and zener diode) Parameter VCEO IC R Value 60±10V 1A 10kΩ l.DTDG14GPT100 Features
* 1)High hFE. 300(Min. ) (VCE/IC=2V/0.5A) 2)Low saturation voltage. (VCE(sat)=400mV at IC/IB=500mA/5mA) 3)Built-in zener diode gives strong protection against reverse surge by L-load (an inductive load). lOutline SOT-89 SC-62 (MPT3) lInner circuit DatashDTDG14GPT100 Applications
* ), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific App
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