* 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small and surface mount package (SOP8). (1) (4) 3.9 6.0 1/7 SP8M21 Transistors N-ch zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current
SP8M21
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4v drive nch + pch mosfet.
www.DataSheet4U.com SP8M21 Transistors 4V Drive Nch+Pch MOSFET SP8M21 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions (Un.
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