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US5U29

2.5V Drive Pch+SBD MOS FET

US5U29 Features

* 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29

US5U29 Datasheet (82.58 KB)

Preview of US5U29 PDF

Datasheet Details

Part number:

US5U29

Manufacturer:

ROHM ↗

File Size:

82.58 KB

Description:

2.5v drive pch+sbd mos fet.
US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT.

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US5U29 2.5V Drive Pch +SBD MOS FET Rohm

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