US5U29 2.5V Drive Pch+SBD MOS FET

Rohm

Description

US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions (Unit : mm) TUMT.

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Datasheet Specifications

Part number: US5U29
Manufacturer: ROHM ↗
File Size: 82.58 KB
Datasheet: US5U29_Rohm.pdf
Description: 2.5V Drive Pch+SBD MOS FET

Features

* 1) The US5U29 combines Pch MOS FET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. (5) (4) 1.7 0.3 0.2 (1) (2) (3) 2.1 0~0.1 0.17 Abbreviated symbol : U29

Applications

* Load switch, DC/DC conversion zPackaging specifications Package Type US5U29 Code Basic ordering unit (pieces) Taping TR 3000 zEquivalent circuit (5) (4) ∗2 ∗1 (1) (2) ∗1 ESD protection diode ∗2 Body diode (3) 0.15Max. 0.2 1pin mark (1)Gate (2)Source (3)Anode (4)Cathode (5)Drain Rev. C 1/4

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US5U29 2.5V Drive Pch +SBD MOS FET Rohm

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