S9850MBA
Roithner LaserTechnik
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Infrared laser diode.
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S9850MG - Infrared Laser Diode
(Roithner LaserTechnik)
S9850MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: single mode • Peak Wavelength : typ. 980 nm • Optical Ouput Power: 50 mW.
S98100MG - Infrared Laser Diode
(Roithner LaserTechnik)
S98100MG
TECHNICAL DATA
Infrared Laser Diode
Features
• Lasing Mode Structure: multi mode • Peak Wavelength : typ. 980 nm • Optical Ouput Power: 100 m.
S9810MG - Laser Diode
(Roithner LaserTechnik)
S9810MG
Bankverbindung: Bank~Austria Creditanstalt AG - Bankleitzahl: 12000 - EURO Kontonummer: 608 547 402 - USD Kontonummer: 570 347 781 EUR Konto I.
S9840 - High UV sensitivity CCD image sensor
(Hamamatsu Corporation)
IMAGE SENSOR
CCD image sensor
S9840
High UV sensitivity CCD image sensor
S9840 is a back-thinned type CCD image sensor specifically designed for spe.
S9004P2CT - 30A SCHOTTKY BARRIER RECTIFIER
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S9004P2CT
30A SCHOTTKY BARRIER RECTIFIER Features
· · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power L.
S9005P2CT - 20A SCHOTTKY BARRIER RECTIFIER
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20A SCHOTTKY BARRIER RECTIFIER Features
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S9011 - NPN Transistor
(WEJ)
RoHS
S9011
S9011
F EATURE Pow er dissipation P CM:
TRANSISTOR (NPN)
TO-92
1 . EMITTER
2. BASE
0 .31 W (Tamb=25℃)
3. COLLECTOR
Co llector curren.
S9011 - NPN Silicon Epitaxial Planar Transistor
(BL)
BL Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collec tor Current.(IC= 30mA) z Power dissipation.(PC=200mW)
Production speci.
S9011 - NPN Transistor
(GME)
NPN Silicon Epitaxial Planar Transistor
FEATURES
Collector Current.(IC= 30mA) Power dissipation.(PC=200mW)
APPLICATIONS
Pb
Lead-free
AM conve.
S9012 - PNP Epitaxial Silicon Transistor
(Fairchild Semiconductor)
SS9012
SS9012
1W Output Amplifier of Potable Radios in
Class B Push-pull Operation.
• High total power dissipation. (PT=625mW) • High Collector Curr.