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RU190N10S

N-Channel Advanced Power MOSFET

RU190N10S Features

* 100V/190A RDS (ON)=6.5mΩ(Typ.) @ VGS=10V

* Avalanche Rated

* Reliable and Rugged

* Lead Free and Green Devices Available Applications

* Automotive applications and a wide variety of other applications

* High Efficiency Synchronous in SMPS

* High Speed Power Switching Pin D

RU190N10S General Description

TO-263 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat S.

RU190N10S Datasheet (280.36 KB)

Preview of RU190N10S PDF

Datasheet Details

Part number:

RU190N10S

Manufacturer:

Ruichips

File Size:

280.36 KB

Description:

N-channel advanced power mosfet.

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RU190N10S N-Channel Advanced Power MOSFET Ruichips

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