Datasheet Details
| Part number | RU3030M2 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 314.01 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU3030M2 Datasheet
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General Description
D D DD
SSS G PIN1
PDFN3333
D
PIN1
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted
Key Features
- 30V/30A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =15mΩ(Typ. )@VGS=4.5V.
- Super High Dense Cell Design.
- Fast Switching Speed.
- Low gate Charge.
- 100% avalanche tested.
- Lead Free and Green Devices Available (RoHS Compliant).