RU3030M2 Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU3030M2, N-Channel Advanced Power MOSFET

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted

RU3030M2 Features

* 30V/30A, RDS (ON) =10mΩ(Typ.)@VGS=10V RDS (ON) =15mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Fast Switching Speed

* Low gate Charge

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

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