Datasheet Details
| Part number | RU3030M3 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 487.02 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
 RU3030M3 Datasheet
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| Part number | RU3030M3 |
|---|---|
| Manufacturer | Ruichips |
| File Size | 487.02 KB |
| Description | N-Channel Advanced Power MOSFET |
| Datasheet |
RU3030M3 Datasheet
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• 30V/30A, RDS (ON) =7mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design • Fast Switching Speed • Low gate Charge • 100% avalanche tested S SSG • Lead Free and Green Devices Available (RoHS Compliant) Applications • Switching Application Systems PIN1 yDFN3333 Onl D DDDD Use G Absolute Maximum Ratings Symbol times Parameter g Common Ratings (TC=25°C Unless Otherwise Noted) n VDSS Drain-Source Voltage he VGSS Gate-Source Voltage gs TJ Maximum Junction Temperature n TSTG Storage Temperature Range To IS Diode Continuous Forward Current Mounted on Large Heat Sink For IDP① 300μs Pulse Drain Current Tested S N-Channel MOSFET Rating Unit TC=25°C 30 V ±20 150 °C -55 to 150 °C 30 A TC=25°C 120 A Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ TC=25°C 30 TC=100°C 19 A TA=25°C 10.8 TA=70°C 8.7 Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ TC=25°C 29 TC=100°C 12 W TA=25°C 3.5 TA=70°C 2.3 Shenzhen City Ruichips Semiconductor Co., Ltd Rev.
A– JAN., 2021 1 www.ruichips.com sales.Mr.wang13826508770 www.sztssd.com RU3030M3 Symbol Parameter Rating Unit RJC Thermal Resistance-Junction to Case 4.2 RJA③ Thermal Resistance-Junction to Ambient 35 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed 42 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) Zero Gate Voltage Drain Current Gate Threshold Voltage VDS=30V, VGS=0V e TJ=125°C Us VDS=VGS, IDS=250µA IGSS es RDS(ON)⑤ Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance VGS=10V, IDS=20A VGS=4.5V, IDS=16A tim Diode Characteristics VSD⑤ g trr Diode Forward Voltage Reverse Recovery Time en Qrr Reverse Recover
sales.Mr.wang13826508770 www.sztssd.com RU3030M3 N-Channel Advanced Power.
| Part Number | Description |
|---|---|
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