Datasheet4U Logo Datasheet4U.com

RU3030M2 Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

Datasheet Details

Part number RU3030M2
Manufacturer Ruichips
File Size 314.01 KB
Description N-Channel Advanced Power MOSFET
Download RU3030M2 Download (PDF)

General Description

D D DD SSS G PIN1 PDFN3333 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD ③ Maximum Power Dissipation@TA S N-Channel MOSFET Rating Unit TC=25°C 30 ±20 150 -55 to 150 30 V °C °C A TC=25°C TC=25°C TC=100°C TA=25°C TA=70°C TC=25°C TC=100°C TA=25°C TA=70°C 120 30 19 10.8 8.7 29 12 3.5 2.3 A A W Ruichips Semiconductor Co., Ltd Rev.

A– APR., 2013 1 www.ruichips.com RU3030M2 Symbol Parameter Rating Unit RθJC ③ RθJA Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient 4.2 35 Drain-Source Avalanche Ratings EAS④ Avalanche Energy, Single Pulsed 42 Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU3030M2 Min.

Typ.

Overview

RU3030M2 N-Channel Advanced Power MOSFET.

Key Features

  • 30V/30A, RDS (ON) =10mΩ(Typ. )@VGS=10V RDS (ON) =15mΩ(Typ. )@VGS=4.5V.
  • Super High Dense Cell Design.
  • Fast Switching Speed.
  • Low gate Charge.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).