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RU6581L

N-Channel Advanced Power MOSFET

RU6581L Features

* 65V/81A, RDS (ON) =7mΩ(Typ.)@VGS=10V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-252 Applications

* Switching Application Systems

RU6581L General Description

TO-252 Applications

* Switching Application Systems

* UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperatur.

RU6581L Datasheet (290.61 KB)

Preview of RU6581L PDF

Datasheet Details

Part number:

RU6581L

Manufacturer:

Ruichips

File Size:

290.61 KB

Description:

N-channel advanced power mosfet.

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RU6581L N-Channel Advanced Power MOSFET Ruichips

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