RUH40130R
Ruichips
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N-channel advanced power mosfet. Applications
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RUH4020H - N-Channel Advanced Power MOSFET
(Ruichips)
RUH4020H
N-Channel Advanced Power MOSFET
Features
• 40V/20A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance • .
RUH4040M2 - N-Channel Advanced Power MOSFET
(Ruichips)
sales.Mr.wang13826508770 .sztssd.
RUH4040M2
N-Channel Advanced Power MOSFET
Features
• 40V/40A, RDS (ON) =5mΩ(Typ.)@VGS=10V RDS (ON) =6.5mΩ(Ty.
RUH4060K - N-Channel Advanced Power MOSFET
(Ruichips)
RUH4060K
N-Channel Advanced Power MOSFET
Features
• 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desig.
RUH4060L - N-Channel Advanced Power MOSFET
(Ruichips)
RUH4060L
N-Channel Advanced Power MOSFET
Features
• 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V • Low On-Resistance • 100% av.
RUH4080M - N-Channel Advanced Power MOSFET
(Ruichips)
RUH4080M
N-Channel Advanced Power MOSFET
Features
• 40V/80A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance •.
RUH1H100R - N-Channel Advanced Power MOSFET
(Ruichips)
RUH1H100R
N-Channel Advanced Power MOSFET
Features
• 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V
• Advanced HEFET® Technology • Ultra Low On-Resistance .
RUH1H150S - N-Channel Advanced Power MOSFET
(Ruichips)
sales.Mr.wang13826508770 .sztssd.
RUH1H150S
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/150A,
RDS (ON) =3.8mΩ(Typ.)@VGS=.
RUH1H80M - N-Channel Advanced Power MOSFET
(Ruichips)
RUH1H80M
N-Channel Advanced Power MOSFET
Features
• 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance •.
RUH1H9H - N-Channel Advanced Power MOSFET
(Ruichips)
RUH1H9H
N-Channel Advanced Power MOSFET
Features
• 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V • Advanced HEFET® Technology • Ultra Low On-Resistance • Exc.
RUH30100M - N-Channel Advanced Power MOSFET
(Ruichips)
RUH30100M
N-Channel Advanced Power MOSFET
Features
• 30V/95A, RDS (ON) =2.7mΩ(Typ.)@VGS=10V RDS (ON) =3.5mΩ(Typ.)@VGS=4.5V • Ultra Low On-Resistance .