RUH4060K Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RUH4060K, N-Channel Advanced Power MOSFET

G DS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ

RUH4060K Features

* 40V/55A, RDS (ON) =6.5mΩ(Typ.)@VGS=10V RDS (ON) =8mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management.

* S