RUH1H100R Datasheet - Ruichips

RUH1H100R N-Channel Advanced Power MOSFET

GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 30.

RUH1H100R Features

* 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V

* Advanced HEFET® Technology

* Ultra Low On-Resistance

* Excellent QgxRDS(on) Product

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Appl

RUH1H100R-Ruichips.pdf

RUH1H100R Datasheet Preview — Preview of RUH1H100R PDF

Datasheet Details

Part number:

RUH1H100R

Manufacturer:

Ruichips

File Size:

364.02 KB

Description:

N-channel advanced power mosfet.

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RUH1H100R RUH1H100R N-Channel Advanced Power MOSFET Ruichips

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