RUH1H100R - N-Channel Advanced Power MOSFET
GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 30
RUH1H100R Features
* 100V/100A, RDS (ON) =5.2mΩ(Typ.)@VGS=10V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Compliant) Appl
