RUH1H100R - N-Channel Advanced Power MOSFET

Ruichips

RUH1H100R Datasheet Preview — Preview of RUH1H100R PDF

Datasheet Details

Part number	RUH1H100R
Manufacturer	Ruichips
File Size	364.02 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RUH1H100R-Ruichips.pdf

RUH1H100R Product details

Description

GDS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RJC Thermal Resistance-Junction to Case RJA Thermal Resistance-Junction to Ambient Drain-Source A

Features

100V/100A, RDS (ON) =5.2mΩ(Typ. )@VGS=10V.
Advanced HEFET® Technology.
Ultra Low On-Resistance.
Excellent QgxRDS(on) Product.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Jan 8, 2019 |