RUH1H80M - N-Channel Advanced Power MOSFET
D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on L
RUH1H80M Features
* 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V
* Ultra Low On-Resistance
* Fast Switching Speed
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* LED backlighting
* On board
