RUH1H80M Datasheet - Ruichips

RUH1H80M N-Channel Advanced Power MOSFET

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on L.

RUH1H80M Features

* 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.5V

* Ultra Low On-Resistance

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* LED backlighting

* On board

RUH1H80M-Ruichips.pdf

RUH1H80M Datasheet Preview — Preview of RUH1H80M PDF

Datasheet Details

Part number:

RUH1H80M

Manufacturer:

Ruichips

File Size:

389.35 KB

Description:

N-channel advanced power mosfet.

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RUH1H80M RUH1H80M N-Channel Advanced Power MOSFET Ruichips

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