RUH1H9H - N-Channel Advanced Power MOSFET
D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large
RUH1H9H Features
* 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V
* Advanced HEFET® Technology
* Ultra Low On-Resistance
* Excellent QgxRDS(on) Product
* Optimized for fast-switching applications
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* Un
