RUH1H9H Datasheet - Ruichips

RUH1H9H N-Channel Advanced Power MOSFET

D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large.

RUH1H9H Features

* 100V/9A, RDS (ON) =17mΩ(Typ.)@VGS=10V

* Advanced HEFET® Technology

* Ultra Low On-Resistance

* Excellent QgxRDS(on) Product

* Optimized for fast-switching applications

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Un

RUH1H9H-Ruichips.pdf

RUH1H9H Datasheet Preview — Preview of RUH1H9H PDF

Datasheet Details

Part number:

RUH1H9H

Manufacturer:

Ruichips

File Size:

268.33 KB

Description:

N-channel advanced power mosfet.

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RUH1H9H RUH1H9H N-Channel Advanced Power MOSFET Ruichips

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