RUH1H150S - N-Channel Advanced Power MOSFET
* 100V/150A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V * Advanced HEFET® Technology * Ultra Low On-Resistance * Excellent QgxRDS(on) Product * 100% avalanche tested * 175°C Operating Temperature * Lead Free and Green Devices Available (RoHS Compliant) D