Datasheet4U Logo Datasheet4U.com

RUH1H150S - N-Channel Advanced Power MOSFET

Description

100V/150A, RDS (ON) =3.8mΩ(Typ.)@VGS=10V Advanced HEFET® Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 175°C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) D

Features

  • Pin.

📥 Download Datasheet

Datasheet preview – RUH1H150S

Datasheet Details

Part number RUH1H150S
Manufacturer Ruichips
File Size 1.22 MB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH1H150S Datasheet
Additional preview pages of the RUH1H150S datasheet.

📁 Similar Datasheet

Other Datasheets by Ruichips
  • RUH1H100R - N-Channel Advanced Power MOSFET
  • RUH1H80M - N-Channel Advanced Power MOSFET
  • RUH1H9H - N-Channel Advanced Power MOSFET
  • RUH30100M - N-Channel Advanced Power MOSFET
  • RUH3051L - N-Channel Advanced Power MOSFET
  • RUH3051M - N-Channel Advanced Power MOSFET
  • RUH3090L - N-Channel Advanced Power MOSFET
  • RUH30J30M - Dual N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
sales.Mr.wang13826508770 www.sztssd.com RUH1H150S N-Channel Advanced Power MOSFET Features Pin Description • 100V/150A, RDS (ON) =3.8mΩ(Typ.
Published: |