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RUH1H80M - N-Channel Advanced Power MOSFET

Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on L

Features

  • 100V/80A, RDS (ON) =8.5mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
  • Ultra Low On-Resistance.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RUH1H80M
Manufacturer Ruichips
File Size 389.35 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RUH1H80M Datasheet
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Full PDF Text Transcription

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RUH1H80M N-Channel Advanced Power MOSFET Features • 100V/80A, RDS (ON) =8.5mΩ(Typ.)@VGS=10V RDS (ON) =10mΩ(Typ.)@VGS=4.
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