RUH1H80M Datasheet N-Channel Advanced Power MOSFET

Manufacturer: Ruichips

RUH1H80M n-channel advanced power mosfet by Ruichips - Datasheet Preview

Datasheet Details

Part number	RUH1H80M
Manufacturer	Ruichips
File Size	389.35 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RUH1H80M Datasheet

General Description

D D DD SSS G PIN1 PDFN5060 D PIN1 G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ID② Continuous Drain Current@TA(VGS=10V)③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA③ S N-Channel MOSFET Rating Unit TC=25°C 100 ±25 150 -55 to 150 50 V °C °C A TC=25°C 200 A TC=25°C 8

Overview

RUH1H80M N-Channel Advanced Power MOSFET.

Key Features

100V/80A, RDS (ON) =8.5mΩ(Typ. )@VGS=10V RDS (ON) =10mΩ(Typ. )@VGS=4.5V.
Ultra Low On-Resistance.
Fast Switching Speed.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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